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| FDQ7238AS June 2005 FDQ7238AS Dual Notebook Power Supply N-Channel PowerTrench(R) in SO-14 Package General Description The FDQ7238AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using TM technology. The FDQ7238AS Fairchild's SyncFET includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Features * Q2: 14 A, 30V. RDS(on) = 8.7 m @ VGS = 10V RDS(on) = 10.5 m @ VGS = 4.5V * Q1: 11 A, 30V. RDS(on) = 13.2 m @ VGS = 10V RDS(on) = 16 m @ VGS = 4.5V S2 S2 S2 SO-14 pin 1 G1 Vin G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25C unless otherwise noted Parameter Q2 30 (Note 1a) Q1 30 20 11 50 1.8 1.1 -55 to +150 Units V V A W C Power Dissipation for Single Operation (Note 1a & 1b) (Note 1c & 1d) 20 14 50 2.4 1.3 Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) (Note 1c & 1d) 52 94 68 118 C/W Package Marking and Ordering Information Device Marking FDQ7238AS FDQ7238AS FDQ7238AS Device FDQ7238AS FDQ7238AS_NL (Note 3) FDQ7238AS_NF40 (Note 4) Reel Size 13" 13" 13" Tape width 16mm 16mm 16mm Quantity 2500 units 2500 units 2500 units (c)2005 Fairchild Semiconductor Corporation FDQ7238AS Rev A(X) FDQ7238AS Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Test Conditions VGS = 0 V, ID = 1 mA ID = 250 A VGS = 0 V, ID = 10 mA, Referenced to 25C ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125C VDS = 0 V VGS = 20 V, VDS = VGS, ID = 1 mA ID = 250 A VDS = VGS, ID = 10 mA, Referenced to 25C ID = 250 A, Referenced to 25C VGS = 10 V, ID = 14 A ID = 13 A VGS = 4.5 V, VGS = 10 V, ID = 14A, TJ = 125C ID = 11 A VGS = 10 V, ID = 10 A VGS = 4.5 V, VGS = 10 V, ID = 11, TJ = 125C VGS = 10 V, VDS = 5 V VDS = 5 V VGS = 10 V, VDS = 10 V, ID = 14 A ID = 11 A VDS = 10 V, Type Min Typ Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 ALL Q2 Q1 Q2 Q1 Q2 30 30 25 24 Max Units V mV/C 500 1 A mA A nA V mV/C 8.7 10.5 12.5 13.2 16 19 m Off Characteristics 5.6 40 100 1 1 1.8 1.7 -3 -4 7.2 8.7 10 11 13 15 3 3 IGSS VGS(th) VGS(th) TJ RDS(on) Gate-Body Leakage (Note 2) On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q1 ID(on) gFS On-State Drain Current Forward Transconductance Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 50 50 58 43 1530 920 440 190 160 120 1.9 1.9 A S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0 MHz VDS = 15 V, f = 1.0 MHz VGS = 0 V, pF pF pF FDQ7238AS Rev A (X) FDQ7238AS Electrical Characteristics Symbol td(on) tr td(off) tf td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd TA = 25C unless otherwise noted Parameter (Note 2) Test Conditions Type Min Typ Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 12 9 13 5 30 27 19 4 17 11 18 15 28 16 13 9 28 17 15 9 4.1 2.7 4.9 3.3 Max Units 21 18 23 10 49 43 35 8 30 20 32 26 44 29 23 18 39 24 21 19 ns ns ns ns ns ns ns ns nC nC nC nC Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 15 V, VGS = 10V, ID = 1 A, RGEN = 6 VDD = 15 V, VGS = 4.5V, ID = 1 A, RGEN = 6 Total Gate Charge, VGS = 10V Total Gate Charge, VGS = 5V Gate-Source Charge Gate-Drain Charge Q2 VDS = 15 V, ID = 14A Q1 VDS = 15 V, ID = 11A Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.4 A VGS = 0 V, IS = 1.9 A IS = 2.1 A VGS = 0 V, IF = 14A dIF/dt = 300 A/s IF = 11A dIF/dt = 100 A/s (Note 2) (Note 2) (Note 2) trr Qrr trr Qrr NOTE : 1. 0.5 0.4 0.7 22 15 16 5 3.4 2.1 0.7 1.2 A V ns nC ns nC RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 68C/W when mounted on a 1in2 pad of 2 oz copper (Q1). c) 118C/W when mounted on a minimum pad of 2 oz copper (Q1). b) 52C/W when mounted on a 1in2 pad of 2 oz copper (Q2). d) 94C/W when mounted on a minimum pad of 2 oz copper (Q2). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. FDQ7238AS_NL is a lead free product. The FDQ7238AS_NL marking will appear on the reel label. 4. FDQ7238AS_NF40 is a lead free product. The FDQ7238AS_NF40 marking will appear on the reel label. FDQ7238AS Rev A (X) FDQ7238AS Typical Characteristics: Q2 50 VGS = 10V 40 6.0V 3.5V 4.0V 4.5V 30 3.0V 20 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.0V 2.2 ID, DRAIN CURRENT (A) 1.8 3.5V 1.4 4.0V 4.5V 6.0V 10.0V 10 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 1 0.6 0 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.024 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 14A VGS =10V 1.4 ID = 7A RDS(ON), ON-RESISTANCE (OHM) 0.02 1.2 0.016 TA = 125oC 0.012 1 TA = 25oC 0.008 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.004 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 50 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V VGS = 0V 40 ID, DRAIN CURRENT (A) 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC 30 20 TA = 125oC -55 C o -55 C o 10 25 C o 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7238AS Rev A (X) FDQ7238AS Typical Characteristics : Q2 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14A 2500 f = 1MHz VGS = 0 V 8 20V 2000 CAPACITANCE (pF) VDS = 10V Ciss 6 15V 1500 4 1000 Coss 2 500 Crss 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 100s RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC 50 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 40 10 SINGLE PULSE RJA = 94C/W TA = 25C 30 1 20 0.1 VGS = 10V SINGLE PULSE RJA = 94oC/W TA = 25 C o 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 94C/W 0.1 0.1 0.05 0.02 0.01 P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1d. Transient thermal response will change depending on the circuit board design FDQ7238AS Rev A (X) FDQ7238AS Typical Characteristics : Q2 SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7238AS Q2. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power dissipated in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 TA = 125oC CURRENT: 0.8A/div 0.001 TA = 100oC 0.0001 TA = 25oC 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12nS/div Figure 12. FDQ7238AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6670A). CURRENT: 0.4A/div TIME : 12nS/div Figure 13. Non-SyncFET (FDS6670A) body diode reverse recovery characteristic. FDQ7238AS Rev A (X) FDQ7238AS Typical Characteristics: Q1 50 VGS = 10V 40 6.0V 4.0V 4.5V 3.5V 30 2.6 VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 ID, DRAIN CURRENT (A) 1.8 3.5V 20 3.0V 10 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5 1.4 4.0V 4.5V 6.0V 1 10.0V 0.6 0 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 15. On-Region Characteristics. Figure 16. On-Resistance Variation with Drain Current and Gate Voltage. 0.036 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 1.4 1.3 1.2 1.1 1 0.9 0.8 -50 ID = 11A VGS = 10V ID = 5.5A 0.032 0.028 0.024 0.02 0.016 TA = 125 C o TA = 25oC 0.012 0.008 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 17. On-Resistance Variation with Temperature. 50 Figure 18. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V VGS = 0V 40 ID, DRAIN CURRENT (A) 10 1 0.1 0.01 0.001 0.0001 TA = 125 C 25oC -55 C o o 30 20 TA = 125 C o -55 C o 10 25oC 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 19. Transfer Characteristics. Figure 20. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7238AS Rev A (X) FDQ7238AS Typical Characteristics: Q1 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 11A 1500 f = 1MHz VGS = 0 V 8 20V 1200 CAPACITANCE (pF) VDS = 10V Ciss 6 15V 900 4 600 Coss 2 300 Crss 0 0 4 8 12 Qg, GATE CHARGE (nC) 16 20 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 21. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 100s RDS(ON) LIMIT Figure 22. Capacitance Characteristics. 50 SINGLE PULSE RJA = 118C/W TA = 25C ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC 40 30 1 20 0.1 VGS = 10V SINGLE PULSE RJA = 118oC/W TA = 25 C o 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 23. Maximum Safe Operating Area. Figure 24. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 118 C/W 0.1 0.1 0.05 0.02 0.01 P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c Transient thermal response will change depending on the circuit board design. FDQ7238AS Rev A (X) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 |
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